SUD45P03-15-E3 Vishay, SUD45P03-15-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD45P03-15-E3
• Description: P CHANNEL MOSFET, -30V, 13A, TO-252
• Manufacturer: Vishay

Specifications of SUD45P03-15-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 13 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics (25 C Unless Otherwise Noted)
V
GS
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
= 10, 9, 8 V
C
rss
V
V
DS
DS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
D
Transconductance
– Drain Current (A)
Capacitance
S-57253—Rev. F, 24-Feb-98
7 V
C
oss
T
C
= –55 C
C
125 C
iss
25 C
6 V
5 V
4 V
3 V
2 V
Siliconix was formerly a division of TEMIC Semiconductors
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V
I
D
DS
= 45 A
On-Resistance vs. Drain Current
= 15 V
V
V
GS
GS
Q
Transfer Characteristics
g
– Gate-to-Source Voltage (V)
I
= 4.5 V
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
SUD45P03-15
T
C
www.siliconix.com
= –55 C
25 C
V
GS
Siliconix
= 10 V
125 C
1-53