IRF510STRLPBF Vishay, IRF510STRLPBF Datasheet
IRF510STRLPBF
Specifications of IRF510STRLPBF
Related parts for IRF510STRLPBF
IRF510STRLPBF Summary of contents
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... S package. The D applications because of its low internal connection N-Channel MOSFET resistance and can dissipate typical surface mount application PAK (TO-263) D PAK (TO-263) SiHF510S-GE3 SiHF510STRL-GE3 IRF510SPbF IRF510STRLPbF SiHF510S-E3 SiHF510STL-E3 IRF510S IRF510STRL SiHF510S SiHF510STL = 25 °C, unless otherwise noted ° 100 ° ...
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... IRF510S, SiHF510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91016 S10-1442-Rev. B, 05-Jul- 4 ° 91016_03 = 25 °C C 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 = 175 °C 0 91016_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF510S, SiHF510S Vishay Siliconix 1 ° ° 175 µs Pulse Width - Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
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... IRF510S, SiHF510S Vishay Siliconix 400 MHz iss rss gd 320 oss ds 240 C iss 160 C oss 80 C rss Drain-to-Source Voltage ( 91016_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 Total Gate Charge (nC) 91016_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91016_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91016 S10-1442-Rev. B, 05-Jul-10 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF510S, SiHF510S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF510S, SiHF510S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91016_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 300 Top ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91016. Document Number: 91016 S10-1442-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...