IRF510STRLPBF Vishay, IRF510STRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF510STRLPBF
• Description: N CH MOSFET, 100V, 5.6A, SMD-220
• Manufacturer: Vishay

Specifications of IRF510STRLPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.6A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 540mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.54 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 3.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF510S, SiHF510S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
91016_12c
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
150
250
200
100
300
50
0
25
V
DD
Starting T
= 25 V
50
+
-
V
DD
J
75
, Junction Temperature (°C)
100
125
Top
Bottom
150
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
2.3 A
4.0 A
5.6 A
DS
Fig. 13b - Gate Charge Test Circuit
V
I
D
GS
Same type as D.U.T.
175
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-1442-Rev. B, 05-Jul-10
Document Number: 91016
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS