IRF740LC Vishay, IRF740LC Datasheet - Page 4

• Manufacturer Part Number: IRF740LC
• Description: N CHANNEL MOSFET, 400V, 10A, TO-220
• Manufacturer: Vishay

Specifications of IRF740LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 550mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF740LC

IRF740LC, SiHF740LC
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91053_05
91053_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2000
1600
1200
800
400
20
16
12
0
8
4
0
10
0
0
I
D
= 11 A
V
6
DS ,
Q
C
C
C
G
Drain-to-Source Voltage (V)
iss
oss
rss
, Total Gate Charge (nC)
12
V
DS
= 80 V
V
C
C
C
18
V
GS
iss
rss
oss
DS
= 0 V, f = 1 MHz
= C
= C
= C
= 200 V
10
24
gs
gd
ds
1
V
+ C
+ C
DS
gd
= 320 V
gd
30
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
ds
Shorted
36
42
91053_07
91053_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
10
0
3
2
1
5
2
5
2
5
2
5
2
1
0.6
Fig. 8 - Maximum Safe Operating Area
1
150
2
V
V
0.8
SD
DS
°
C
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
25
1.0
10
°
T
T
Single Pulse
C
C
J
by R
= 150 °C
= 25 °C
2
1.2
DS(on)
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
5
Document Number: 91053
10
1.4
2
2
V
1.6
GS
= 0 V
10
100
1
10
5
ms
ms
µs
10
1.8
µs
3