IRF9Z20PBF Vishay, IRF9Z20PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9Z20PBF
• Description: P CHANNEL MOSFET, -50V, 9.7A TO-220
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z20PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -9.7A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z20PBF

IRF9Z20, SiHF9Z20
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
R
R
R
R
V
thCS
thJC
t
t
thJA
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
g
L
L
t
I
SM
t
oss
t
t
on
DS
rss
SD
iss
gd
S
rr
fs
gs
r
D
S
f
g
rr
V
V
V
T
DS
Between lead,
6 mm (0.25") from
package and center
of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
essentially independent of operating
T
= 25 °C, I
R
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
= max. rating x 0,8, V
= - 10 V
= - 10 V
g
(MOSFET switching times are
= 25 °C, I
V
V
= 18 , R
DS
DS
V
V
V
DD
TYP.
f = 1.0 MHz, see fig. 9
DS
GS
1.0
TEST CONDITIONS
= max. rating, V
= 2 x V
-
-
= - 25 V, I
F
= V
= 0 V, I
V
V
temperature)
= - 9.7 A, dI/dt = 100 A/μs
GS
V
DS
S
GS
I
max. rating. see fig. 17
D
D
GS
= - 9.7 A, V
GS
= - 25 V,
= - 9.7 A, V
= 2.4, see fig. 16
, I
= ± 20 V
= 0 V,
D
, I
D
I
= - 250 μA
= - 250 μA
D
DS
D
GS
= - 9.7 A,
= - 5.6 A
= - 5.6 A
= 0 V, T
GS
G
G
GS
= 0 V
DS
= 0 V
J
b
= - 0.8
=125°C
b
D
S
D
S
MAX.
3.1
b
80
-
b
MIN.
- 2.0
0.17
- 50
2.3
56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0511-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 90121
TYP.
0.20
0.34
480
320
110
3.5
4.1
5.7
8.2
4.5
7.5
58
17
57
12
25
-
-
-
-
-
-
-
-
- 1000
UNIT
°C/W
MAX.
± 500
- 250
- 4.0
- 9.7
- 6.3
0.28
0.85
- 39
280
6.2
8.6
26
12
86
18
38
-
-
-
-
-
-
-
S
and L
UNIT
D
nC
nH
μC
nA
μA
pF
ns
ns

S
A
)
V
V
V