IRF9Z20PBF Vishay, IRF9Z20PBF Datasheet - Page 7

• Manufacturer Part Number: IRF9Z20PBF
• Description: P CHANNEL MOSFET, -50V, 9.7A TO-220
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRF9Z20PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -9.7A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z20PBF

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90121.
Document Number: 90121
S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
90121_18
Fig. 17 - Typical Time to Accumulated 1 % Gate Failure
10
10
10
10
10
10
12
10
8
6
4
2
50
70
Temperature (°C)
14 V
16 V
18 V
20 V
90
110
This datasheet is subject to change without notice.
130
150
Fig. 18 - Typical High Temperature Reverse Bias (HTRB) Failure
90121_19
10
10
10
10
1
4
3
2
50
20 FIT’s
99 % UCL
70
IRF9Z20, SiHF9Z20
Temperature (°C)
90 % UCL
Rate
90
www.vishay.com/doc?91000
60 % UCL
Vishay Siliconix
110
130
www.vishay.com
150
1
10
10
10
0.1
-4
-2
-3
7