IRFP22N60K Vishay, IRFP22N60K Datasheet - Page 7

• Manufacturer Part Number: IRFP22N60K
• Description: N CHANNEL MOSFET, 600V, 22A, TO-247
• Manufacturer: Vishay

Specifications of IRFP22N60K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91208.
Document Number: 91208
S-81274-Rev. A, 16-Jun-08
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dV/dt
Forward Drop
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
dI/dt
Current Transformer
D =
-
G
IRFP22N60K, SiHFP22N60K
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
Vishay Siliconix
www.vishay.com
7