IRFZ44SPBF Vishay, IRFZ44SPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ44SPBF
• Description: N CHANNEL MOSFET, 60V, 36A, D2-PAK
• Manufacturer: Vishay

Specifications of IRFZ44SPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 36A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 92 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ44, SiHFZ44 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.
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2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)
Maximum Junction-to-Case
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
S
g
rr
/T
J
T
Between lead, and center of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
GS
GS
= 25 °C, I
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
Reference to 25 °C, I
= 10 V
= 10 V
J
= 25 °C, I
= 48 V, V
R
f = 1.0 MHz, see fig. 5
V
V
V
V
V
g
TYP.
TEST CONDITIONS
DS
GS
DS
DS
DD
= 9.1 , R
-
-
F
= V
= 0 V, I
= 25 V, I
= 51 A, dI/dt = 100 A/μs
V
= 60 V, V
= 30 V, I
V
see fig. 10
V
GS
DS
S
GS
GS
GS
I
D
= 51 A, V
= ± 20 V
= 25 V,
, I
= 0 V, T
= 0 V,
see fig. 6 and 13
= 51 A, V
D
D
D
D
D
= 250 μA
= 250 μA
GS
= 0,55 ,
I
= 31 A
D
= 51 A,
b
= 0 V
= 31 A
D
J
GS
= 1 mA
= 150 °C
DS
G
b
= 0 V
d
= 48 V,
b
b
MAX.
b
D
S
1.0
40
b, d
MIN.
2.0
60
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2476-Rev. B, 01-Nov-10
Document Number: 91293
TYP.
1900
0.06
920
170
110
120
530
7.5
14
45
92
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.028
250
200
180
800
50
4.0
2.5
S
25
67
18
25
-
-
-
-
-
-
-
-
-
-
-
and L
d
D
UNIT
V/°C
)
nC
nH
nC
nA
μA
pF
ns
ns

S
A
V
V
V