IRFZ44SPBF Vishay, IRFZ44SPBF Datasheet - Page 7

• Manufacturer Part Number: IRFZ44SPBF
• Description: N CHANNEL MOSFET, 60V, 36A, D2-PAK
• Manufacturer: Vishay

Specifications of IRFZ44SPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 36A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3.7 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 92 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 110 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91293.
Document Number: 91293
S10-2476-Rev. B, 01-Nov-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Body diode forward
-
+
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7