SUB65P06-20-E3 Vishay, SUB65P06-20-E3 Datasheet
SUB65P06-20-E3
Specifications of SUB65P06-20-E3
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SUB65P06-20-E3 Summary of contents
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... S-05111—Rev. C, 10-Dec- –65 TO-263 Top View SUB65P06-20 _ Symbol T = 25_C 125_C 0 25_C (TO-220AB and TO-263 125_C (TO-263 Symbol c PCB Mount (TO-263) Free Air (TO-220AB) SUP/SUB65P06-20 Vishay Siliconix P-Channel MOSFET Limit " – –39 I –200 DM I – 180 AR d 250 –55 to 175 J stg ...
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... SUP/SUB65P06-20 Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge c Gate-Drain Charge ...
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... V – Drain-to-Source Voltage (V) DS Document Number: 70289 S-05111—Rev. C, 10-Dec- 0.030 0.025 T = –55_C C 0.020 25_C 125_C 0.015 0.010 0.005 0.000 80 100 C iss SUP/SUB65P06-20 Vishay Siliconix Transfer Characteristics 200 T = –55_C C 160 25_C 120 – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) ...
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... SUP/SUB65P06-20 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 –50 – – Junction Temperature (_C) J Maximum Avalanche and Drain Current vs. Case Temperature 100 T – Case Temperature (_C) C Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...