SUB65P06-20-E3 Vishay, SUB65P06-20-E3 Datasheet - Page 3
![P CHANNEL MOSFET, -60V, -65A TO-263](/photos/19/7/190743/3833580_sml.gif)
SUB65P06-20-E3
Manufacturer Part Number
SUB65P06-20-E3
Description
P CHANNEL MOSFET, -60V, -65A TO-263
Manufacturer
Vishay
Datasheet
1.SUP65P06-20-E3.pdf
(5 pages)
Specifications of SUB65P06-20-E3
Transistor Polarity
P Channel
Continuous Drain Current Id
-65A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUB65P06-20-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
6000
5000
4000
3000
2000
1000
200
160
120
100
80
40
80
60
40
20
0
0
0
0
0
0
C
V
rss
GS
10
20
2
V
V
= 10, 9, 8 V
V
DS
DS
GS
Output Characteristics
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Transconductance
20
Capacitance
40
4
C
30
oss
60
6
40
T
C
C
80
= –55_C
8
iss
50
125_C
_
25_C
7 V
6 V
5 V
4 V
100
10
60
0.030
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
80
40
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 65 A
25
On-Resistance vs. Drain Current
= 30 V
20
V
2
GS
Q
Transfer Characteristics
SUP/SUB65P06-20
50
g
– Gate-to-Source Voltage (V)
I
V
V
D
– Total Gate Charge (nC)
GS
GS
– Drain Current (A)
Gate Charge
40
= 10 V
= 20 V
4
T
75
C
25_C
= –55_C
Vishay Siliconix
100
60
6
125
www.vishay.com
80
125_C
8
150
100
175
10
2-3