SUD06N10-225L-T1-E3 Vishay, SUD06N10-225L-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD06N10-225L-T1-E3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SUD06N10-225L-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71253
S−42350—Rev. B, 20-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
350
300
250
200
150
100
15
12
15
12
50
9
6
3
0
9
6
3
0
0
0
0
0
20
2
V
3
V
DS
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
D
− Drain Current (A)
Capacitance
40
4
6
C
oss
60
V
6
9
4 V
GS
= 10 thru 5 V
C
T
iss
C
= −55_C
C
12
80
8
rss
125_C
3, 2 V
25_C
100
10
15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0
0
0
V
I
V
D
DS
GS
= 6.5 A
On-Resistance vs. Drain Current
= 50 V
= 4.5 V
V
1
3
1
GS
Q
Transfer Characteristics
g
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
SUD06N10-225L
2
6
2
Vishay Siliconix
3
9
3
V
T
GS
25_C
C
= −55_C
= 10 V
12
4
4
www.vishay.com
125_C
15
5
5
3