SUM110N08-07L-T1-E3 Vishay, SUM110N08-07L-T1-E3 Datasheet

N CHANNEL MOSFET, 75V, 110A

SUM110N08-07L-T1-E3

Manufacturer Part Number
SUM110N08-07L-T1-E3
Description
N CHANNEL MOSFET, 75V, 110A
Manufacturer
Vishay
Datasheet

Specifications of SUM110N08-07L-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
110A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
11mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
250W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
a.
b.
c.
d.
Document Number: 72007
S-32618—Rev. B, 29-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient—PCB Mount
Junction-to-Case
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
75
75
(V)
Ordering Information: SUM110N08-07L
J
J
b
b
b
= 175_C)
= 175_C)
N-Channel 75-V (D-S), 175_C MOSFET
d
0.0095 @ V
0.007 @ V
Parameter
Parameter
r
DS(on)
SUM110N08-07L—E3 (Lead Free)
G
Top View
TO-263
GS
GS
(W)
D
= 10 V
= 4.5 V
S
T
L = 0.1 mH
T
T
T
C
A
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
New Product
d
I
D
110
102
(A)
a
G
Symbol
Symbol
N-Channel MOSFET
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive and Industrial
D
S
−55 to 175
SUM110N08-07L
Limit
Limit
110
230
3.75
0.65
300
245
75
20
69
70
40
Vishay Siliconix
a
c
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM110N08-07L-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 0.007 @ 0.0095 @ V GS TO-263 G Top View Ordering Information: SUM110N08-07L SUM110N08-07L—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy ...

Page 2

... SUM110N08-07L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... V − Drain-to-Source Voltage (V) DS Document Number: 72007 S-32618—Rev. B, 29-Dec-03 New Product −55_C C 25_C 125_C rss 60 75 SUM110N08-07L Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 0.012 0.010 0.008 V GS ...

Page 4

... SUM110N08-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV J 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product 100 ...

Page 5

... Document Number: 72007 S-32618—Rev. B, 29-Dec-03 New Product 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −2 − Square Wave Pulse Duration (sec) SUM110N08-07L Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 − Drain-to-Source Voltage ( ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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