SUM60N04-06T-E3 Vishay, SUM60N04-06T-E3 Datasheet

N CHANNEL MOSFET, 40V, 60A

SUM60N04-06T-E3

Manufacturer Part Number
SUM60N04-06T-E3
Description
N CHANNEL MOSFET, 40V, 60A
Manufacturer
Vishay
Datasheet

Specifications of SUM60N04-06T-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.5mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
200W
No. Of Pins
5
Configuration
Single
Resistance Drain-source Rds (on)
0.0088 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
3.75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71746
S-80274-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
(BR)DSS
Ordering Information: SUM60N04-06T-E3 (Lead (Pb)-free)
40
(V)
N-Channel 40-V (D-S) MOSFET with Sensing Diode
d
0.0055 at V
D
G
1
2
2
PAK-5L
r
DS(on)
J
a
3
b
D
= 175 °C)
T
4
1
5
GS
S
(Ω)
= 10 V
T
2
d
d
C
I
= 25 °C, unless otherwise noted
D
60
(A)
a
T
PCB Mount
T
L = 0.1 mH
T
T
C
C
C
A
= 100 °C
= 25 °C
= 25 °C
= 25 °C
d
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• Industrial
G
Temperature Sensing Diode
N-Channel MOSFET
Symbol
Symbol
T
R
J
R
V
V
E
I
I
D
S
P
, T
DM
I
I
AR
thJC
GS
thJA
DS
AR
D
S
D
®
stg
Power MOSFETS Plus
- 55 to 175
SUM60N04-06T
Limit
3.75
Limit
± 20
200
250
180
0.75
60
60
60
60
T
T
40
40
1
2
a
a
a
a
c
d
D
Vishay Siliconix
1
www.vishay.com
D
2
°C/W
Unit
Unit
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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SUM60N04-06T-E3 Summary of contents

Page 1

... PAK- Ordering Information: SUM60N04-06T-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) Avalanche Current b Repetitive Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM60N04-06T Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Sense Diode Forward Voltage Sense Diode Forward Voltage Increase a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... C rss Drain-to-Source Voltage (V) DS Capacitance Document Number: 71746 S-80274-Rev. B, 11-Feb- 0.008 25 °C 0.006 125 °C 0.004 0.002 0.000 80 100 120 SUM60N04-06T Vishay Siliconix 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SUM60N04-06T Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time 1.0 0 µ µA D 0.4 0.2 0 Junction Temperature (°C) J Sense Diode Forward Voltage vs. Temperature www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71746. Document Number: 71746 S-80274-Rev. B, 11-Feb-08 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM60N04-06T Vishay Siliconix 1000 Limited by r DS(on) * 100 °C C Single Pulse 0.1 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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