sum60n04-05c Vishay, sum60n04-05c Datasheet
sum60n04-05c
Related parts for sum60n04-05c
sum60n04-05c Summary of contents
Page 1
... PAK KELVIN Ordering Information: SUM60N04-05C ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) Avalanche Current b Single Pulse Avalanche Energy a Maximum Power Dissipation ...
Page 2
... SUM60N04-05C Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge c Gate-Source Charge ...
Page 3
... S-71599-Rev. C, 30-Jul- °C 125 °C 80 100 120 SUM60N04-05C Vishay Siliconix 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.008 0.006 ...
Page 4
... SUM60N04-05C Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature ( J On-Resistance vs. Junction Temperature 1000 100 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Avalanche Current vs. Time ...
Page 5
... Document Number: 72370 S-71599-Rev. C, 30-Jul- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case = 10 V 0.08 0. Ω Ω Ω SUM60N04-05C Vishay Siliconix - Gate-to-Source Voltage (V) GS On-Resistance vs ...
Page 6
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...