SUP60N10-16L-E3 Vishay, SUP60N10-16L-E3 Datasheet
SUP60N10-16L-E3
Specifications of SUP60N10-16L-E3
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SUP60N10-16L-E3 Summary of contents
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... Symbol 25_C 125_C 0 25_C Symbol R thJA R thJC SUP60N10-16L Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch D S N-Channel MOSFET Limit 100 " 100 150 - 55 to 175 stg Limit 62.5 1.0 Unit Unit _C/W _C/W www ...
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... SUP60N10-16L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... V - Drain-to-Source Voltage (V) DS Document Number: 71928 S-03600—Rev. B, 31-Mar- 0.030 0.025 25_C 0.020 125_C 0.015 0.010 0.005 0.000 100 SUP60N10-16L Vishay Siliconix Transfer Characteristics 120 100 125_C C 20 25_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0 Junction Temperature (_C) J www.vishay.com 4 100 10 1 100 125 150 175 0 Drain Source Breakdown vs. Junction Temperature 130 125 120 115 110 105 100 100 T - Junction Temperature (_C) ...
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... Single Pulse 0. Document Number: 71928 S-03600—Rev. B, 31-Mar-03 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUP60N10-16L Vishay Siliconix Safe Operating Area 10 ms 100 ms Limited DS(on 100 25_C C Single Pulse 0 100 V - Drain-to-Source Voltage (V) ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...