SUP60N10-16L-E3 Vishay, SUP60N10-16L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP60N10-16L-E3
• Description: N CHANNEL MOSFET, 100V, 60A
• Manufacturer: Vishay

Specifications of SUP60N10-16L-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 150W
• Configuration: Single
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71928
S-03600—Rev. B, 31-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
6000
5000
4000
3000
2000
1000
120
160
120
90
60
30
80
40
0
0
0
0
0
0
10
T
C
20
C
2
V
V
= - 55_C
20
DS
rss
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
I
Transconductance
GS
D
30
- Drain Current (A)
= 10 thru 6 V
Capacitance
40
4
40
C
C
oss
iss
4 V
50
60
6
60
3 V
70
80
8
125_C
25_C
80
5 V
100
10
90
0.030
0.025
0.020
0.015
0.010
0.005
0.000
120
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
V
I
0.5
D
DS
10
= 60 A
V
On-Resistance vs. Drain Current
= 50 V
GS
20
V
1.0
GS
= 4.5 V
20
Q
Transfer Characteristics
g
- Gate-to-Source Voltage (V)
I
D
1.5
- Total Gate Charge (nC)
- Drain Current (A)
30
Gate Charge
40
SUP60N10-16L
25_C
2.0
T
Vishay Siliconix
C
40
= 125_C
2.5
60
50
3.0
V
GS
60
3.5
www.vishay.com
- 55_C
= 10 V
80
70
4.0
100
4.5
80
3