BT152-500RT NXP Semiconductors, BT152-500RT Datasheet - Page 6

• Manufacturer Part Number: BT152-500RT
• Description: THYRISTOR,20A,500V,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT152-500RT

• Peak Repetitive Off-state Voltage, Vdrm: 500V
• Gate Trigger Current Max, Igt: 3mA
• Current It Av: 13A
• On State Rms Current It(rms): 20A
• Peak Non Rep Surge Current Itsm 50hz: 220A
• Holding Current Max Ih: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 6.
BT152-500RT_1
Product data sheet
Symbol
Dynamic charateristics
dV
t
t
gt
q
Fig 7.
Fig 9.
D
I
/dt
dV
(V/ s)
L(25 C)
I
D
L
10
10
10
/dt
10
3
2
1
0
4
3
2
function of junction temperature; typical values
junction temperature
Critical rate of rise of off-state voltage as a
Normalized latching current as a function of
0
50
Characteristics
Parameter
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
(2)
(1)
0
50
…continued
50
100
Conditions
V
circuit; see
I
dI
V
V
dV
TM
DM
DM
R
100
G
D
/dt = 5 A/µs
= 25 V; (dI
= 40 A; V
T
/dt = 50 V/µs; R
= 335 V; T
= 335 V; T
j
003aad210
003aab825
T
( C)
j
( C)
Figure 7
150
150
D
Rev. 01 — 12 May 2009
T
/dt)
= 500 V; I
j
j
= 125 °C; gate open
= 125 °C; I
M
GK
= 30 A/µs;
= 100 Ω
G
Fig 8.
Fig 10. Normalized holding current as a function of
= 100 mA;
TM
I
GT(25 C)
I
H(25 C)
I
= 20 A;
GT
I
H
3
2
1
0
3
2
1
0
junction temperature
junction temperature
Normalized gate trigger current as a function of
50
50
0
0
SCR, 20 A, 32 mA, 500 V, SOT78
Min
200
-
-
50
50
BT152-500RT
Typ
300
2
70
100
100
© NXP B.V. 2009. All rights reserved.
003aab824
T
003aad211
T
j
j
Max
-
-
-
( C)
( C)
150
150
Unit
V/µs
µs
µs
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