PBSS4021SPN NXP Semiconductors, PBSS4021SPN Datasheet
PBSS4021SPN
Specifications of PBSS4021SPN
Related parts for PBSS4021SPN
PBSS4021SPN Summary of contents
Page 1
... Product profile 1.1 General description NPN/PNP low V medium power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4021SPN 1.2 Features and benefits Very low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1 ...
Page 2
... CEsat [1] Pulse test Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS4021SPN SO8 4. Marking Table 5. Type number PBSS4021SPN PBSS4021SPN Product data sheet Quick reference data …continued Parameter Conditions transistor CEsat collector-emitter voltage open base collector current peak collector current single pulse − ...
Page 3
... T amb ≤ 25 °C total power dissipation T amb junction temperature ambient temperature storage temperature O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat Min Max - 7.5 −6 ≤ ...
Page 4
... O , standard footprint All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat 006aac258 25 75 125 175 T (°C) amb 2 ...
Page 5
... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SPN Product data sheet −3 −2 − −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat 006aac259 (s) p 006aac260 (s) p © ...
Page 6
... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021SPN Product data sheet −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat 006aac261 (s) p © ...
Page 7
... Bon rise time turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat Min Typ = [1] 300 ...
Page 8
... V; I transition frequency 100 MHz = − collector capacitance MHz ≤ 300 μs; δ ≤ 0.02. p All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat Min Typ = ...
Page 9
... C Fig 6. 006aac264 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat I (mA 8.0 4.0 7 0.0 0.0 1.0 2.0 3 °C T amb TR1 (NPN): Collector current as a function of collector-emitter voltage ...
Page 10
... I (mA) C Fig 10. TR1 (NPN): Collector-emitter saturation 006aac268 (1) (2) ( (mA) C Fig 12. TR1 (NPN): Collector-emitter saturation All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat 1 V CEsat (V) −1 10 (1) −2 10 (2) (3) −3 10 − °C T amb ...
Page 11
... I (mA) C (1) T (2) T (3) T Fig 16. TR2 (PNP): Base-emitter saturation voltage as All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat (mA) = −200 I B −160 −120 −80 −8.0 −40 −4.0 0.0 −1.0 −2.0 − ...
Page 12
... I (mA) C (1) I (2) I (3) I Fig 20. TR2 (PNP): Collector-emitter saturation All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat −1 −1 (1) (2) −2 (3) −3 −1 −10 −1 −10 −10 − ° ...
Page 13
... Fig 22. TR1 (NPN): Test circuit for switching times PBSS4021SPN Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 Ω DUT mlb826 = − ...
Page 14
... PBSS4021SPN Product data sheet (probe) oscilloscope 450 Ω −12 − −0. Bon All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V CEsat − I (100 %) Bon − I Boff off (probe) o oscilloscope 450 Ω DUT mgd624 = 0 ...
Page 15
... Dimensions in mm Packing methods Package Description SOT96 pitch tape and reel All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat 1.75 1.0 0.4 0.49 0.25 0.36 0.19 ...
Page 16
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat 1.30 4.00 6.60 7.00 1.27 (6×) Dimensions in mm enlarged solder land 1 ...
Page 17
... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS4021SPN v.2 20101013 • Modifications: Figure 1 “Per device: Power derating PBSS4021SPN v.1 20100714 PBSS4021SPN Product data sheet 20 V NPN/PNP low V Data sheet status Product data sheet curves”: updated. Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — ...
Page 18
... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved. ...
Page 19
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 13 October 2010 PBSS4021SPN 20 V NPN/PNP low V (BISS) transistor CEsat © NXP B.V. 2010. All rights reserved ...
Page 20
... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com (BISS) transistor CEsat All rights reserved. Date of release: 13 October 2010 Document identifier: PBSS4021SPN ...