PEMB9 NXP Semiconductors, PEMB9 Datasheet - Page 3

• Manufacturer Part Number: PEMB9
• Description: TRANSISTOR,PNP/PNP W/RES,50V,SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMB9

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Power Dissipation Pd: 300mW
• Dc Collector Current: -100mA
• Operating Temperature Range: -65°C To +150°C
• Dc Current Gain Hfe: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2003 Oct 03
PEMB9
PUMB9
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
SYMBOL
O
CM
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
I
tot
tot
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
SOT363
SOT666
SOT363
SOT666
−
−
PARAMETER
NAME
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
DESCRIPTION
PACKAGE
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
MIN.
PEMB9; PUMB9
−50
−50
−10
+6
−40
−100
−100
200
200
+150
150
+150
300
300
MAX.
Product data sheet
SOT666
SOT363
VERSION
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
mW
mW
UNIT