BU806 MULTICOMP, BU806 Datasheet
BU806
Specifications of BU806
Available stocks
Related parts for BU806
BU806 Summary of contents
Page 1
... EBO 0.48 W/° -65 to +150 °C J STG Symbol Maximum Unit Rθjc 2.08 °C/W Page 1 = 200V (Minimum) - BU806 CEO (sus) 1.5V (Maximum (SAT 5.0A 50mA NPN BU806 8.0 Ampere Darlington Complementary Silicon Power Transistors 200 Volts 60 Watts TO-220 16/03/06 V1.0 ...
Page 2
... BU806 Darlington Transistors Power Derating Schematic Diagram Electrical Characteristics (T Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage ( 100mA Collector Cut off Current (V = 400V Emitter Cut off Current (V =6.0V Characteristics (1) Collector-Emitter Saturation Voltage (I = 5.0A 50mA Base-Emitter Saturation Voltage (I = 5.0A 50mA Diode Forward Voltage (I = 4.0A ) ...
Page 3
... At high case temperatures, thermal T J (PK) limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Package Type TO-220 NPN = 150° (PK) C Part Number BU806 16/03/06 V1.0 ...
Page 4
... BU806 Darlington Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – Farnell-Newark InOne ...