BU806 MULTICOMP, BU806 Datasheet - Page 3

• Manufacturer Part Number: BU806
• Description: BIPOLAR TRANSISTOR, NPN, 200V, TO-220
• Manufacturer: MULTICOMP

Specifications of BU806

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 200V
• Power Dissipation Pd: 60W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 375
• Operating Temperature Range: -65°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications
BU806
Darlington Transistors
maximum
I
C (av)
(A)
8
Figure 3 Active Region Safe Operating Area
maximum
V
200
CEO
V
DC Current Gain
minimum
at I
h
375
c
FE
= 4A
Page 3
at 25°C
P
(W)
60
tot
There are two limitations on the power handling ability
of a transistor: average junction temperature and
second breakdown safe operating area curves indicate
I
reliable operation i.e., the transistor must not be
subjected to greater dissipation than curves indicate.
The data of SOA curve is based on T
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
limitation will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
C
J (PK)
-V
CE
Package
TO-220
≤150°C. At high case temperatures, thermal
limits of the transistor that must be observed for
Type
NPN
J (PK)
16/03/06 V1.0
Part Number
= 150°C; T
BU806
C