NTE108-1 NTE ELECTRONICS, NTE108-1 Datasheet
NTE108-1
Manufacturer Part Number
NTE108-1
Description
TRANSISTOR,BJT,NPN,15V V(BR)CEO,50MA I(C),TO-106
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE108.pdf
(2 pages)
Specifications of NTE108-1
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise,
high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating
circuits with rise and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient (Note 1), R
Note 1. R
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Derate Above 25°C
ΘJA
Parameter
is measured with the device soldered into a typical printed circuit board.
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Frequency Amplifier
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE108 and NTE108−1
Silicon NPN Transistor
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
C
C
E
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, I
= 3mA, I
= 1µA, I
= 15V, I
Test Conditions
thJA
E
B
C
= 0
E
= 0, Note 2
= 0
= 0
. . . . . . . . . . . . . . . . . . . . . . . . .
Min Typ Max Unit
15
30
3
−
−55° to +150°C
−55° to +150°C
−
−
−
−
+83.3°C/W
+200°C/W
10
12mW/°C
−
−
−
625mW
50mA
nA
15V
30V
V
V
V
3V
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NTE108-1 Summary of contents
Page 1
... Description: The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector−Emitter Voltage, V Collector− ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics Current Gain−Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Common−Emitter Amplifier Power Gain Power Output Oscillator Collector Efficiency Note 2. ...