AT-42000-GP4 Avago Technologies US Inc., AT-42000-GP4 Datasheet - Page 2

• Manufacturer Part Number: AT-42000-GP4
• Description: RF TRANSISTOR, NPN, 12V, 9GHZ
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-42000-GP4

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 9GHz
• Power Dissipation Pd: 600mW
• Dc Collector Current: 80mA
• Dc Current Gain Hfe: 150
• No. Of Pins: 2
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 2GHz ~ 4GHz
• Gain: 10.5dB ~ 14dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 35mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: 12mm x 12mm x 6mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AT-42000 Absolute Maximum Ratings
Part Number Ordering Information
Electrical Specifications, T
2
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
Symbol
|S
P
G
NF
G
f
h
I
I
C
Symbol
T
CBO
EBO
FE
1 dB
CB
1 dB
A
21E
V
V
V
T
O
P
EBO
CBO
CEO
I
T
STG
C
|
T
j
2
Part Number
AT-42000-GP4
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
C
O
= 35 mA
; V
Parameters and Test Conditions
CE
A
= 8 V, I
= 25 °C
[2,3]
CE
EB
CE
C
= 8 V, I
CE
CB
CE
[2]
= 10 mA
= 8 V, I
= 1 V
= 8 V, I
: V
= 8 V
= 8 V, I
CB
C
Devices Per Tray
CE
Units
= 8 V, f = 1 MHz
= 35 mA
mW
C
mA
C
°C
°C
V
V
V
C
= 8 V, I
= 10 mA
= 35 mA
= 35 mA
100
C
Maximum
= 35 mA
Absolute
-65 to 200
600
200
[1]
1.5
20
12
80
[1]
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz dBm
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 14.3 mW/ °C for
4. The small spot size of this tech-
any of these limits are exceeded.
T
nique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section
ÒThermal ResistanceÓ for more
information.
Mounting Surface
Mounting Surface
Thermal Resistanc e
Units
GHz
dB
dB
dB
dB
m A
m A
pF
Ñ
θ
jc
Min.
= 70°C/W
30
> 158°C.
= 25°C.
Typ.
11.5
21.0
20.5
15.0
10.0
14.0
10.5
0.23
150
5.5
1.9
3.0
9.0
[2,4]
Max.
270
0.2
2.0
:
jc