AT-42000-GP4 Avago Technologies US Inc., AT-42000-GP4 Datasheet - Page 2
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AT-42000-GP4
Manufacturer Part Number
AT-42000-GP4
Description
RF TRANSISTOR, NPN, 12V, 9GHZ
Manufacturer
Avago Technologies US Inc.
Datasheet
1.AT-42000-GP4.pdf
(5 pages)
Specifications of AT-42000-GP4
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency Typ Ft
9GHz
Power Dissipation Pd
600mW
Dc Collector Current
80mA
Dc Current Gain Hfe
150
No. Of Pins
2
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain
10.5dB ~ 14dB
Power - Max
600mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 35mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Package / Case
12mm x 12mm x 6mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-42000-GP4
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-42000 Absolute Maximum Ratings
Part Number Ordering Information
Electrical Specifications, T
2
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
Symbol
|S
P
G
NF
G
f
h
I
I
C
Symbol
T
CBO
EBO
FE
1 dB
CB
1 dB
A
21E
V
V
V
T
O
P
EBO
CBO
CEO
I
T
STG
C
|
T
j
2
Part Number
AT-42000-GP4
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
C
O
= 35 mA
; V
Parameters and Test Conditions
CE
A
= 8 V, I
= 25 °C
[2,3]
CE
EB
CE
C
= 8 V, I
CE
CB
CE
[2]
= 10 mA
= 8 V, I
= 1 V
= 8 V, I
: V
= 8 V
= 8 V, I
CB
C
Devices Per Tray
CE
Units
= 8 V, f = 1 MHz
= 35 mA
mW
C
mA
C
°C
°C
V
V
V
C
= 8 V, I
= 10 mA
= 35 mA
= 35 mA
100
C
Maximum
= 35 mA
Absolute
-65 to 200
600
200
[1]
1.5
20
12
80
[1]
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz dBm
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 14.3 mW/ °C for
4. The small spot size of this tech-
any of these limits are exceeded.
T
nique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section
ÒThermal ResistanceÓ for more
information.
Mounting Surface
Mounting Surface
Thermal Resistanc e
Units
GHz
dB
dB
dB
dB
m A
m A
pF
Ñ
θ
jc
Min.
= 70°C/W
30
> 158°C.
= 25°C.
Typ.
11.5
21.0
20.5
15.0
10.0
14.0
10.5
0.23
150
5.5
1.9
3.0
9.0
[2,4]
Max.
270
0.2
2.0
:
jc