2MBI200U2A-060-50 FUJI ELECTRIC, 2MBI200U2A-060-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI200U2A-060-50
• Description: DUAL IGBT MODULE 200A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200U2A-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 660W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
1000
1000
30
25
20
15
10
100
100
5
0
10
10
1.0
1.0
0
Vcc=300V, Ic=200A, VGE=±15V, Tj= 125
Vcc=300V, VGE=±15V, Rg=16 , Tj= 25
Vcc=300V, Ic=200A, VGE=±15V, Tj= 25
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
ton
Gate resistance : Rg [
toff
Collector current : Ic [ A ]
Gate resistance : Rg [
100
toff
ton
10.0
10.0
200
tr
]
]
300
tr
tf
tf
Eon
Eoff
Err
100.0
100.0
400
10000
500
400
300
200
100
1000
100
20
15
10
0
10
5
0
0
0
+VGE=15V,-VGE 15V, RG 16 ,Tj 125
MS5F 5616
0
Vcc=300V, VGE=±15V, Rg=16 , Tj=125
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
Collector - Emitter voltage : VCE [ V ]
Vcc=300V, VGE=±15V, Rg=16
Collector current : Ic [ A ]
200
100
100
Collector current : Ic [ A ]
400
200
200
600
300
300
10
H04-004-03a
Eoff(125 )
Eon(125 )
Eoff(25 )
Eon(25 )
Err(125 )
Err(25 )
ton
toff
tr
tf
13
800
400
400
a