2MBI200U2A-060-50 FUJI ELECTRIC, 2MBI200U2A-060-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI200U2A-060-50
• Description: DUAL IGBT MODULE 200A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200U2A-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.45V
• Power Dissipation Max: 660W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

500
400
300
200
100
500
400
300
200
100
100.0
10.0
0
0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
VGE=20V 15V 12V
10
VGE=15V / chip
Tj= 25
2
Tj=25
2
Coes
/ chip
3
Cres
20
Cies
3
Tj=125
4
10V
8V
30
5
4
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
500
400
300
200
100
10
Collector current vs. Collector-Emitter voltage (typ.)
8
6
4
2
0
0
0
5
0
MS5F 5616
Vcc=300V Ic=200A Tj= 25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
1
200
10
Gate charge : Qg [ nC ]
Tj= 125
Tj=25 C / chip
VGE
2
VGE=20V 15V 12V
400
15
/ chip
VCE
3
600
20
Ic=400A
Ic=200A
Ic=100A
4
H04-004-03a
9
10V
8V
13
800
25
5
a