6MBI75U4B-120-50 FUJI ELECTRIC, 6MBI75U4B-120-50 Datasheet - Page 10

• Manufacturer Part Number: 6MBI75U4B-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75U4B-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100.0
200
150
100
10.0
200
150
100
50
1.0
0.1
50
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
Collector-Emitter voltage : VCE [ V ]
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
20
12V
Tj=125
o
C
4
o
4
C
Coes
Cies
Cres
10V
8V
30
5
5
10
200
150
100
8
6
4
2
0
50
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
0
5
0
Collector current vs. Collector-Emitter voltage (typ.)
MS5F 6196
Collector-Emitter voltage : VCE [ V ]
100
1
10
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=75A, Tj=25
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
200
15
o
o
C / chip
C / chip
VGE
VCE
3
15V
300
20
o
C
H04-004-03a
Ic=150A
Ic=75A
Ic=37.5A
4
10
14
12V
10V
8V
400
25
5
a