6MBI75U4B-120-50 FUJI ELECTRIC, 6MBI75U4B-120-50 Datasheet - Page 11

• Manufacturer Part Number: 6MBI75U4B-120-50
• Description: 6-PACK IGBT MODULE 75A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75U4B-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
30
20
10
1000
1000
0
100
100
10
10
1
Vcc=600V, VGE=±15V, RG=9.1Ω, Tj=25
1
0
Vcc=600V, Ic=75A, VGE=±15V,
Vcc=600V, Ic=75A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
10
10
50
ton
tf
100
toff
100
100
Eoff
ton
toff
tr
Eon
Err
Tj=25
tr
tf
o
o
C
C
o
C
1000
1000
150
15
12
200
150
100
10000
9
6
3
0
50
1000
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω,
0
100
0
10
0
Vcc=600V, VGE=±15V, RG=9.1Ω, Tj=125
0
Switching loss vs. Collector current (typ.)
MS5F 6196
Switching time vs. Collector current (typ.)
25
Vcc=600V, VGE=±15V, RG=9.1Ω
Reverse bias safe operating area (max.)
Collector-Emitter voltage : VCE [ V ]
400
Collector current : Ic [ A ]
50
Collector current : Ic [ A ]
50
75
800
100
100
1200
Tj <= 125
tr
H04-004-03a
11
Eon(125
Eon(25
Eoff(125
Err(125
Eoff(25
Err(25
125
ton
toff
tf
o
14
C
o
o
C
o
C)
o
o
C)
C)
o
C)
1600
o
C)
150
C)
150
a