BSP298 Infineon Technologies, BSP298 Datasheet - Page 7

• Manufacturer Part Number: BSP298
• Description: MOSFET, N, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP298

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Package: SOT-223
• Vds (max): 400.0 V
• Rds (on) (max) (@10v): 3,000.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Rev 2.0
C
DS (on)
DS (on)
10
10
10
10
7.5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
nF
-1
-2
DS
-60
1
0
0
= (T
)
GS
D
5
j
)
= 0.5 A, V
-20
=0V, f = 1 MHz
10
20
15
GS
98%
typ
20
= 10 V
60
25
100
30
T
°C
V
V
j
DS
C
C
C
iss
oss
rss
160
40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= (V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
-1
-2
-60
SD
0.0
1
0
= (T
)
0.4
j
j
GS
)
, t
-20
p
= V
= 80 µs
0.8
DS
20
, I
1.2
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
98%
typ
2%
= 1 mA
1.6
60
2.0
100
2.4
2005-11-23
T
V
BSP 298
°C
j
SD
V
160
3.0