BSP299L6327 Infineon Technologies, BSP299L6327 Datasheet - Page 8

• Manufacturer Part Number: BSP299L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP299L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

Avalanche energy E
parameter: I
R
Safe operating area I
parameter : D = 0.01, T
Semiconductor Group
E
GS
AS
= 25 , L = 163 mH
140
120
110
100
mJ
90
80
70
60
50
40
30
20
10
0
20
D
40
= 1.2 A, V
60
AS
D
=f( V
C
80
DD
=25°C
= ( T
= 50 V
DS
100
j
)
)
120
°C
T
j
160
8
Drain-source breakdown voltage
V
V
(BR)DSS
(BR)DSS
600
580
570
560
550
540
530
520
510
500
490
480
470
460
450
V
-60
= ( T
-20
j
)
20
60
100
Sep-12-1996
BSP 299
T
°C
j
160