BSP317PL6327 Infineon Technologies, BSP317PL6327 Datasheet - Page 3

• Manufacturer Part Number: BSP317PL6327
• Description: MOSFET, P, LOGIC, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP317PL6327

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 370mA
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 6ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: -1.5V
• Rohs Compliant: Yes

Rev.1.3
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
DS
=-0.34A
=-0.43A, R
=25°C
=-125V, I
/dt=100A/µs
=-200V, I
=-200V, I
=0 to -10V
=-200V, I
=0, V
=-30V, V
=0, I
| 2*|I
Conditions
F
DS
D
=-0.43A
|*R
F =
=-25V,
G
GS
D
D
D
DS(on)max
=6
l
=-0.43A
=-0.43A,
=-0.43A
S
=-10V,
,
,
min.
0.38
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-11.6
-0.84
0.76
13.4
11.1
typ.
210
254
-0.5
-2.8
210
5.7
30
67
92
-4
-
-
BSP 317 P
2005-11-23
max.
-0.65 nC
-15.1
-0.43 A
-1.72
16.7
16.6
262
381
100
-5.2
-1.2
138
315
8.5
37
-
-
Unit
S
pF
ns
V
V
ns
nC