BSP318S Infineon Technologies, BSP318S Datasheet - Page 4

• Manufacturer Part Number: BSP318S
• Description: MOSFET, N, LOGIC, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP318S

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.6A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.6V
• Rohs Compliant: Yes
• Package: SOT-223
• Vds (max): 60.0 V
• Rds (on) (max) (@10v): 90.0 mOhm
• Rds (on) (max) (@4.5v): 150.0 mOhm
• Rds (on) (max) (@2.5v): -

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate charge at threshold
V
Gate charge at V
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= 30 V, I
= 30 V, I
= 40 V, I
= 40 V, I
= 40 V, I
= 40 V , I
= 0 V, I
F
F =
F
= I
D
D
D
= 5.2 A
D
l
S
S
= 0.1 A, V = 1 V
= 2.6 A, V
= 2.6 A, V
= 2.6 A
, d i
, d i
GS
F
F
= 5 V
/d t = 100 A/µs
/d t = 100 A/µs
GS
GS
= 0 to 5 V
= 0 to 10 V
j
= 25 °C, unless otherwise specified
Final data
Page 4
Symbol
Q
Q g(5)
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
G(th)
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
0.95
0.4
3.6
0.1
14
50
7
-
-
max.
max.
10.4
0.15
0.6
2.6
1.2
10
20
75
1999-10-28
-
BSP318S
Unit
nC
V
Unit
A
V
ns
µC