BSP318SL6327 Infineon Technologies, BSP318SL6327 Datasheet

MOSFET, N, LOGIC, REEL 1K

BSP318SL6327

Manufacturer Part Number
BSP318SL6327
Description
MOSFET, N, LOGIC, REEL 1K
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP318SL6327

Transistor Polarity
N Channel
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.6V
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP318SL6327
Manufacturer:
INF
Quantity:
7 071
Part Number:
BSP318SL6327XT
Manufacturer:
Infineon
Quantity:
800
SIPMOS
Features
Type
BSP318S
Maximum Ratings,at T
Parameter
Continuous drain current
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
Enhancement mode
A
jmax
A
N-Channel
Avalanche rated
Logic Level
d v /d t rated
= 2.6 A, V
= 2.6 A, V
= 25 °C
= 25 °C
= 150 °C
DS
DD
Small-Signal-Transistor
= 20 V, d i /d t = 200 A/µs,
= 25 V, R
Package
SOT-223
j
= 25 °C, unless otherwise specified
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
Ordering Code
Q67000-S4002
jmax
jmax
Final data
Page 1
Symbol
I
I
E
I
E
d v /d t
V
P
T
D
D puls
AR
j ,
AS
AR
GS
tot
T
stg
Pin 1
-55... +150
55/150/56
G
V
I
Value
D
10.4
0.18
DS
DS(on)
2.6
2.6
1.8
60
20
6
4
Pin 2, 4
D
1999-10-28
BSP318S
0.09
2.6
60
1
PIN 3
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
2
VPS05163
S
V
A
3

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BSP318SL6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features N-Channel Enhancement mode Avalanche rated Logic Level rated Type Package BSP318S SOT-223 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current Pulsed drain current °C ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Dynamic Characteristics Gate charge at threshold 0 Gate charge 2.6 ...

Page 5

Power Dissipation tot A BSP318S 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area parameter : D ...

Page 6

Typ. output characteristic =25° parameter µs p BSP318S 6 1.80W tot 5 5.0 4.5 4.0 ...

Page 7

Typ. capacitances parameter MHz Avalanche Energy AS parameter 2 ...

Page 8

Drain-source breakdown voltage (BR)DSS j BSP318S -60 - Final data °C 100 180 T j Page 8 BSP318S 1999-10-28 ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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