BSP318SL6327 Infineon Technologies, BSP318SL6327 Datasheet
BSP318SL6327
Specifications of BSP318SL6327
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BSP318SL6327 Summary of contents
Page 1
SIPMOS Small-Signal-Transistor Features N-Channel Enhancement mode Avalanche rated Logic Level rated Type Package BSP318S SOT-223 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current Pulsed drain current °C ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate charge at threshold 0 Gate charge 2.6 ...
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Power Dissipation tot A BSP318S 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area parameter : D ...
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Typ. output characteristic =25° parameter µs p BSP318S 6 1.80W tot 5 5.0 4.5 4.0 ...
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Typ. capacitances parameter MHz Avalanche Energy AS parameter 2 ...
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Drain-source breakdown voltage (BR)DSS j BSP318S -60 - Final data °C 100 180 T j Page 8 BSP318S 1999-10-28 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...