BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 10
![MOSFET,N CH,75V,120A,SOT226](/photos/41/52/415241/sot226_3d_sml.gif)
BUK6E4R0-75C
Manufacturer Part Number
BUK6E4R0-75C
Description
MOSFET,N CH,75V,120A,SOT226
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6E4R0-75C127.pdf
(14 pages)
Specifications of BUK6E4R0-75C
Transistor Polarity
N Channel
Drain Source Voltage Vds
120V
On Resistance Rds(on)
3600µohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
SOT-226
Rohs Compliant
Yes
NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT226 (I2PAK)
BUK6E4R0-75C
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT226
4.5
4.1
A
1.40
1.27
A
1
0.85
0.60
b
IEC
D
L
b
1.3
1.0
1
D
1
b
1
0.7
0.4
c
All information provided in this document is subject to legal disclaimers.
TO-262
JEDEC
1
max
e
11
D
E
REFERENCES
2
e
Rev. 02 — 30 August 2010
1.6
1.2
D
1
3
0
b
10.3
9.7
E
L
JEITA
scale
1
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
3.30
2.79
A
L
1
1
Q
2.6
2.2
Q
A
BUK6E4R0-75C
PROJECTION
EUROPEAN
c
N-channel TrenchMOS FET
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
06-02-14
09-08-25
SOT226
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