IGB01N120H2 Infineon Technologies, IGB01N120H2 Datasheet - Page 8

• Manufacturer Part Number: IGB01N120H2
• Description: IGBT,1200V,1A,TO263
• Manufacturer: Infineon Technologies

Specifications of IGB01N120H2

• Transistor Type: IGBT
• Dc Collector Current: 1A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 28W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 3.2 A
• Ic(max) @ 100°: 1.3 A

Power Semiconductors
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D = t
10
10
10
100pF
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(V
-1
-2
0
10pF
K/W
K/W
K/W
GE
p
V
1µs
/ T)
CE
0V
0.2
0.05
0.02
= 0V, f = 1MHz)
D=0.5
0.1
0.01
,
single pulse
COLLECTOR
10µs
t
p
,
PULSE WIDTH
10V
100µs
R
2.5069
1.1603
0.8327
R , ( K / W )
1
C
-
EMITTER VOLTAGE
1
=
1
/ R
1ms
1
20V
C
0.00066
0.00021
0.00426
2
=
10ms
, ( s )
2
/R
R
2
2
30V
100ms
C
C
C
rss
oss
iss
8
Figure 20. Typical turn off behavior, hard
switching
(V
Dynamic test circuit in Figure E)
1000V
GE
800V
600V
400V
200V
Figure 18. Typical gate charge
(I
20V
15V
10V
0V
=15/0V, R
C
5V
0V
0nC
= 1A)
0.0
0.2
U
Q
G
=220Ω, T
CE
t
GE
p
0.4
,
=240V
,
5nC
PULSE WIDTH
GATE CHARGE
0.6
IGB01N120H2
j
0.8
= 150 C,
1.0
10nC
U
CE
Rev. 2.4 Oct. 07
=960V
1.2
1.0A
0.8A
0.6A
0.4A
0.2A
0.0A
15nC