IXFK24N100F IXYS RF, IXFK24N100F Datasheet - Page 3

• Manufacturer Part Number: IXFK24N100F
• Description: MOSFET, N, RF, TO-264
• Manufacturer: IXYS RF

Specifications of IXFK24N100F

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 1kV
• Continuous Drain Current Id: 24A
• Power Dissipation Max: 560W
• Operating Temperature Range: -55°C To +150°C
• Rf Transistor Case: TO-264
• No. Of Pins: 3
• Package / Case: TO-264
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
Fig. 1. Output Characteristics at 25
28
24
20
16
12
0
8
4
0
Fig. 3. R
-50 -25
0
0
Fig. 5. Drain vs. Case Temperature
V
5
GS
T
J
= 10V
10 15 20 25 30 35 40 45 50
= 25
5
DS(ON)
0
O
C
T
I
D
25
C
V
10
vs. Drain Current
- Amperes
T
- Degrees C
DS
T
J
J
= 150
= 25
- Volts
V
50
GS
O
= 10V
O
C
15
C
9V
8V
7V
75
100 125 150
20
6V
5V
IXF_24N100F-P1
o
25
C
Fig. 2. Output Characteristics at 125
25
20
15
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
0
5
0
3.0
0
-25
Fig. 6. Admittance Curves
T
3.5
Fig. 4. R
V
T
J
5
J
GS
= 125
= 125
0
= 10V
O
o
C
4.0
C
10
25
T
J
V
V
- Degrees C
GS
I
I
DS(ON)
D
DS
D
= 24A
= 12A
50
T
4.5
- Volts
- Volts
15
J
V
= 25
GS
vs. T
= 10V
75
o
IXFK 24N100F
IXFX 24N100F
C
5.0
9V
8V
7V
20
100 125 150
T
J
J
= -40
6V
5.5
25
o
C
5V
6.0
o
30
C