IXFK24N100F IXYS RF, IXFK24N100F Datasheet - Page 4

• Manufacturer Part Number: IXFK24N100F
• Description: MOSFET, N, RF, TO-264
• Manufacturer: IXYS RF

Specifications of IXFK24N100F

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 1kV
• Continuous Drain Current Id: 24A
• Power Dissipation Max: 560W
• Operating Temperature Range: -55°C To +150°C
• Rf Transistor Case: TO-264
• No. Of Pins: 3
• Package / Case: TO-264
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 7. Gate Charge Characteristic Curve
0.001
15
10
50
45
40
35
30
25
20
15
10
0.01
5
0
5
0
0.1
0.2
0
1
10
-4
V
DS
50
I
D
= 500V
0.4
= 12A
Gate Charge - nC
100
T
J
= 125
V
0.6
SD
150
O
- Volts
C
10
-3
0.8
200
Fig. 10. Thermal Impedence
T
J
250
1.0
= 25
O
IXF_24N100F-P2
C
300
1.2
Pulse Width - Seconds
10
-2
5000
2500
1000
500
250
100
0
10
-1
Fig. 8. Capacitance Curves
5
10
Single Pulse
Coss
Ciss
Crss
15
V
DS
- Volts
20
10
0
25
IXFK 24N100F
IXFX 24N100F
f = 1MHz
30
35
40
10
1