PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 6

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
PBSS4041PZ_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
V
Conditions
V
V
T
V
V
V
I
V
V
V
V
I
I
I
I
I
I
I
I
I
V
V
I
I
I
f = 100 MHz
I
C
C
C
C
C
C
C
C
C
C
C
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= −500 mA
= −1 A; I
= −1 A; I
= −2 A; I
= −4 A; I
= −4 A; I
= −6 A; I
= −5 A; I
= −1 A; I
= −4 A; I
= −1 A; I
= −100 mA;
= i
= 0.05 A
= −60 V; I
= −60 V; I
= −48 V; V
= −5 V; I
= −2 V;
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −2 V; I
= −10 V;
= −10 V;
= −12.5 V;
e
= 0 A; f = 1 MHz
Bon
B
B
B
B
B
B
B
B
B
C
= −50 mA
= −10 mA
= −40 mA
= −200 mA
= −400 mA
= −300 mA
= −500 mA
= −100 mA
= −400 mA
C
C
C
C
C
E
E
= −0.05 A;
= 0 A
60 V, 5.7 A PNP low V
= −1 A
= −2 A
= −4 A
= −6 A
= −2 A
BE
= 0 A
= 0 A;
= 0 V
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
200
200
200
150
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4041PZ
Typ
-
-
-
-
300
300
300
250
200
−42
−82
−98
−130
−115
−190
29
−0.82
−0.98
−0.74
60
120
530
100
630
110
85
CEsat
60
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−100
−55
−100
−100
-
-
-
-
-
−63
−125
−150
−195
−175
−285
43.5
−0.9
−1.05
−0.85
-
-
-
-
-
-
-
-
mV
ns
ns
ns
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
MHz
pF
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