SQD15N06-42L-GE3 Vishay, SQD15N06-42L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD15N06-42L-GE3
• Description: MOSFET,N CH,W DIODE,60V,15A,TO-252
• Manufacturer: Vishay

Specifications of SQD15N06-42L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.037ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 33W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68880
S11-0253-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
700
600
500
400
300
200
100
50
40
30
20
10
25
20
15
10
0
5
0
0
0
0
0
C
rss
10
2
2
V
V
C
DS
DS
oss
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
20
I
D
Capacitance
- Drain Current (A)
4
4
30
V
C
GS
iss
6
6
V
= 10 V thru 6 V
GS
40
T
T
A
C
T
= 5 V
C
C
= - 55 °C
= 25 °C, unless otherwise noted)
= 25 °C
= 125 °C
V
This datasheet is subject to change without notice.
GS
V
8
8
GS
= 3 V
50
= 4 V
10
10
60
0.10
0.08
0.06
0.04
0.02
10
40
32
24
16
0
8
6
4
2
0
8
0
0
0
0
T
C
= 125 °C
I
V
T
D
DS
C
= 15 A
= 25 °C
On-Resistance vs. Drain Current
2
4
= 30 V
2
V
GS
Transfer Characteristics
Q
- Gate-to-Source Voltage (V)
g
T
- Total Gate Charge (nC)
I
C
D
V
= - 55 °C
GS
- Drain Current (A)
Gate Charge
4
8
4
SQD15N06-42L
= 4.5 V
V
www.vishay.com/doc?91000
GS
Vishay Siliconix
= 10 V
12
6
6
www.vishay.com
16
8
8
10
10
20
3