SQD15N06-42L-GE3 Vishay, SQD15N06-42L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD15N06-42L-GE3
• Description: MOSFET,N CH,W DIODE,60V,15A,TO-252
• Manufacturer: Vishay

Specifications of SQD15N06-42L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.037ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 33W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.042 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68880
S11-0253-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
100
0.1
10
1
0.01
10
This datasheet is subject to change without notice.
* V
-2
GS
T
Single Pulse
C
= 25 °C
minimum V
V
0.1
DS
Limited by
Square Wave Pulse Duration (s)
R
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
10
-1
GS
*
I
DM
at which R
1
Limited
Limited
I
D
BVDSS Limited
DS(on)
1
10
is specified
100
100 µs
1 ms
10 ms
100 ms
1 s,10 s, DC
10
SQD15N06-42L
www.vishay.com/doc?91000
Vishay Siliconix
100
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1000
5