SQD50N03-06P-GE3 Vishay, SQD50N03-06P-GE3 Datasheet

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SQD50N03-06P-GE3

Manufacturer Part Number
SQD50N03-06P-GE3
Description
MOSFET,N CH,W DIODE,30V,50A,TO-252
Manufacturer
Vishay
Datasheet

Specifications of SQD50N03-06P-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0047ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
83W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0065 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 120 V
Continuous Drain Current
84 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SQD50N03-06P-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
Document Number: 68634
S10-2210-Rev. C, 27-Sep-10
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
G
DS
DS(on)
DS(on)
Top View
TO-252
(A)
(V)
D
() at V
() at V
S
Drain Connected to Tab
GS
GS
= 10 V
= 4.5 V
b
a
N-Channel 30 V (D-S) 175 °C MOSFET
b
G
N-Channel MOSFET
a
0.0060
0.0085
Single
C
30
50
= 25 °C, unless otherwise noted)
D
S
PCB Mount
L = 0.1 mH
T
T
Automotive
T
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
c
TO-252
SQD50N03-06P-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
Definition
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
thJC
DM
thJA
I
I
AS
DS
GS
D
S
AS
D
stg
®
Power MOSFET
d
- 55 to + 175
LIMIT
LIMIT
± 20
200
101
1.8
30
50
50
50
45
83
27
50
SQD50N03-06P
Vishay Siliconix
www.vishay.com
UNIT
UNIT
°C/W
mJ
°C
W
A
V
1

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SQD50N03-06P-GE3 Summary of contents

Page 1

... Parametric verification ongoing. Document Number: 68634 S10-2210-Rev. C, 27-Sep-10 Automotive FEATURES • Halogen-free According to IEC 61249-2-21 30 Definition 0.0060 • TrenchFET 0.0085 • Compliant to RoHS Directive 2002/95/EC 50 • AEC-Q101 Qualified Single N-Channel MOSFET TO-252 SQD50N03-06P-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 125 ° ...

Page 2

... SQD50N03-06P Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 68634 S10-2210-Rev. C, 27-Sep- °C, unless otherwise noted ° 4 100 SQD50N03-06P Vishay Siliconix 140 120 100 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 120 100 = - 55 ° ...

Page 4

... SQD50N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS ( Total Gate Charge (nC) g Gate Charge 100 10 = 150 ° 0.1 0. ° 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage 0.5 0.1 - 0.3 - 0.7 - 1 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted) ...

Page 5

... Limited D 10 Limited DS(on °C BVDSS Limited 0 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient SQD50N03-06P Vishay Siliconix 100 μ 100 100 is specified 10 100 www.vishay.com 1000 5 ...

Page 6

... SQD50N03-06P Vishay Siliconix THERMAL RATINGS ( °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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