SQD50N03-06P-GE3 Vishay, SQD50N03-06P-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQD50N03-06P-GE3
• Description: MOSFET,N CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N03-06P-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0047ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 83W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 120 V
• Continuous Drain Current: 84 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

THERMAL RATINGS (T
Document Number: 68634
S10-2210-Rev. C, 27-Sep-10
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.02
0.1
0.2
10
Single Pulse
A
-3
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.01
100
0.1
10
1
0.01
10
-2
T
Single Pulse
* V
C
= 25 °C
GS
> minimum V
V
0.1
DS
Limited by R
Square Wave Pulse Duration (s)
I
D
- Drain-to-Source Voltage (V)
Safe Operating Area
Limited
10
-1
GS
I
DM
at which R
DS(on)
Limited
1
*
BVDSS Limited
DS(on)
1
10
is specified
100 μs
1 ms
10 ms
100 ms
1 s,10 s, DC
100
10
SQD50N03-06P
Vishay Siliconix
100
www.vishay.com
1000
5