SQD50N03-09-GE3 Vishay, SQD50N03-09-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50N03-09-GE3
• Description: MOSFET,N CH,W DIODE,30V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N03-09-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.006ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 71W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 68867
S10-2148-Rev. A, 27-Sep-10
3000
2500
2000
1500
1000
120
100
500
80
60
40
20
80
64
48
32
16
0
0
0
0
0
0
C
T
rss
C
V
= - 55 °C
GS
5
4
= 10 V thru 5 V
8
V
V
T
DS
DS
C
Output Characteristics
C
oss
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 125 °C
Transconductance
V
10
I
GS
D
Capacitance
- Drain Current (A)
= 4 V
C
8
16
iss
15
12
24
T
C
20
= 25 °C
V
V
A
GS
GS
= 25 °C, unless otherwise noted)
= 2 V
16
= 3 V
32
25
20
30
40
0.05
0.04
0.03
0.02
0.01
120
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
T
C
T
= 125 °C
C
I
D
5
= 25 °C
On-Resistance vs. Drain Current
= 62 A
20
2
V
10
GS
Transfer Characteristics
Q
- Gate-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
T
D
15
C
- Drain Current (A)
Gate Charge
40
4
= - 55 °C
SQD50N03-09
V
20
DS
Vishay Siliconix
= 15 V
60
6
25
V
GS
V
www.vishay.com
30
GS
= 4.5 V
80
8
= 10 V
35
100
10
40
3