SQD50N06-07L-GE3 Vishay, SQD50N06-07L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD50N06-07L-GE3
• Description: MOSFET,N CH,W DIODE,60V,50A,TO-252
• Manufacturer: Vishay

Specifications of SQD50N06-07L-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 0.0064ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes

TYPICAL CHARACTERISTICS (T
Document Number: 69099
S10-2055-Rev. B, 27-Sep-10
0.025
0.020
0.015
0.010
0.005
0.000
120
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0
0
0
On-Resistance vs. Drain Current
T
20
3
C
V
1
V
DS
= 125 °C
Transfer Characteristics
GS
T
Output Characteristics
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
= 25 °C
I
D
- Drain Current (A)
V
40
GS
6
2
= 4.5 V
V
V
GS
GS
= 10 V thru 4 V
= 10 V
T
60
9
3
C
= - 55 °C
A
= 25 °C, unless otherwise noted)
V
GS
12
80
4
= 3 V
100
15
5
6000
5000
4000
3000
2000
1000
120
100
150
120
80
60
40
20
90
60
30
0
0
0
0
0
0
C
rss
C
oss
C
10
10
iss
1
V
V
GS
Transfer Characteristics
DS
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
Transconductance
C
T
I
20
D
= 125 °C
C
- Drain Current (A)
Capacitance
= 25 °C
20
2
SQD50N06-07L
30
Vishay Siliconix
30
3
40
T
T
T
C
C
T
C
= - 55 °C
C
= - 55 °C
= 125 °C
= 25 °C
www.vishay.com
40
4
50
50
60
5
3