VS-GA200SA60UP Vishay, VS-GA200SA60UP Datasheet - Page 3

• Manufacturer Part Number: VS-GA200SA60UP
• Description: IGBT, SOT-227
• Manufacturer: Vishay

Specifications of VS-GA200SA60UP

• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.6V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 500W
• Rohs Compliant: Yes

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1000
100
10
2 0 0
1 6 0
1 2 0
8 0
4 0
0
0.5
0.1

T = 150 C
J
Fig. 2 - Typical Output Characteristics
Square wave:
1.0
V
CE
°
60% of rated
, Collector-to-Emitter Voltage (V)
Ideal diodes

T = 25 C
voltage
1.5
J
°
2.0

Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
2.5
= 15V
(Load Current = I
1
3.0
3.5
f, Fre quen cy (kH z)
RMS
1000
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
5.0
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 140W
J
sink
= 90°C
V

T = 150 C
J
GE
1 0
, Gate-to-Emitter Voltage (V)
GA200SA60U
6.0
°

T = 25 C
J
Triangular wave:

°
V
20µs PULSE WIDTH
5µs PULSE WIDTH
CE
7.0
Clamp voltage:
80% of rated
= 25V
3
8.0
1 0 0
A