VS-GA200SA60UP Vishay, VS-GA200SA60UP Datasheet - Page 4

• Manufacturer Part Number: VS-GA200SA60UP
• Description: IGBT, SOT-227
• Manufacturer: Vishay

Specifications of VS-GA200SA60UP

• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.6V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 500W
• Rohs Compliant: Yes

GA200SA60U
Fig. 4 - Maximum Collector Current vs. Case
0.001
200
150
100
0.01
4
50
0.1
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
C
Temperature
75

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
0.01

V
80 us PULSE WIDTH
GE
vs. Junction Temperature

= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
J
20
DM
40
x Z
1
0.1

thJC
60
2
P
DM
+ T
80 100 120 140 160
www.irf.com
C

I =

I =

I =
t
C
C
C
1
t
400
200
100
2
°
A
A
A
1