VS-GB50LA120UX Vishay, VS-GB50LA120UX Datasheet - Page 4

• Manufacturer Part Number: VS-GB50LA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50LA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB50LA120UX
Vishay Semiconductors
www.vishay.com
4
5.5
5.0
4.5
4.0
3.5
3.0
160
140
120
100
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
80
60
40
20
0.0002
6
5
4
3
2
0
10
0
Fig. 7 - Maximum DC Forward Current vs.
Fig. 5 - Typical IGBT Threshold Voltage
I
F
30
Junction Temperature, V
10
- Continuous Forward Current (A)
0.0004
T
J
20
50
= 25 °C
[e-mail], [e-mail],
100 A
Case Temperature
For technical questions within your region, please contact one of the following:
30
70
50 A
I
C
T
0.0006
25 A
J
(mA)
40
(°C)
90
T
J
= 125 °C
50
110
"Low Side Chopper" IGBT SOT-227
GE
0.0008
60
= 15 V
130
70
150
(Ultrafast IGBT), 50 A
0.001
80
[e-mail]
1000
100
200
175
150
125
100
10
75
50
25
4
3
2
1
0
0
10
Fig. 8 - Typical Diode Forward Characteristics
0
0
Fig. 10 - Typical IGBT Switching Time vs. I
Fig. 9 - Typical IGBT Energy Loss vs. I
T
T
J
J
= 125 °C, L = 500 μH, V
= 125 °C, L = 500 μH, V
10
1
t
d(on)
20
R
R
t
d(off)
g
g
20
T
2
= 5 , V
= 5 , V
J
= 25 °C
t
V
r
I
I
C
C
FM
30
30
3
(A)
(A)
GE
GE
(V)
Document Number: 93102
= 15 V
= 15 V
E
on
40
4
CC
CC
Revision: 22-Jul-10
T
40
t
f
J
= 600 V,
= 600 V,
= 125 °C
50
E
5
off
C
50
60
C
6