VS-GB50LA120UX Vishay, VS-GB50LA120UX Datasheet - Page 8

• Manufacturer Part Number: VS-GB50LA120UX
• Description: TRANSISTOR,IGBT,1200V,50A,SOT227
• Manufacturer: Vishay

Specifications of VS-GB50LA120UX

• Transistor Type: IGBT
• Dc Collector Current: 84A
• Collector Emitter Voltage Vces: 3.22V
• Power Dissipation Max: 431W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GB50LA120UX
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
8
Dimensions
Packaging information
Device code
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
1
2
3
4
5
6
7
8
G
1
-
-
-
-
-
-
-
-
"Low Side Chopper" IGBT SOT-227
B
2
Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5
Current rating (50 = 50 A)
Circuit configuration (L = Low side chopper)
Package indicator (A = SOT-227)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
X = F/W HEXFRED
LINKS TO RELATED DOCUMENTS
(Ultrafast IGBT), 50 A
50
3
3
2
L
4
®
diode
A
5
1
4
120
6
[e-mail]
U
7
www.vishay.com/doc?95036
www.vishay.com/doc?95037
X
8
Document Number: 93102
Revision: 22-Jul-10