111RKI80 Vishay, 111RKI80 Datasheet - Page 2

• Manufacturer Part Number: 111RKI80
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

110/111RKI Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM
T(AV)
I
DRM
TSM
Phase Control Thyristors
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
t
(Stud Version), 110 A
,
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
DC at 83 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 6 V resistive load
= 350 A, T
= 50 V, dV/dt = 20 V/µs; gate 0 V 25 Ω
= 50 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
J
J
DRM
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
= T
T(AV)
T(AV)
= T
J
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
J
, T
J
maximum, dI/dt = - 5 A/µs,
< I < π x I
< I < π x I
g
maximum, t
J
/dt = 1 A/µs
J
J
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
p
RRM
= 10 ms sine pulse
), T
), T
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
Document Number: 93692
VALUES
VALUES
VALUES
Revision: 06-Jun-08
2080
2180
1750
1830
21.7
19.8
15.3
14.0
0.82
1.02
2.16
1.70
1.57
300
110
500
110
172
217
200
400
1.0
20
90
UNITS
UNITS
UNITS
kA
kA
V/µs
A/µs
mΩ
mA
mA
°C
µs
A
A
A
V
V
2
2
√s
s