111RKI80 Vishay, 111RKI80 Datasheet - Page 3

• Manufacturer Part Number: 111RKI80
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of 111RKI80

• Breakover Current Ibo Max: 2180 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.57 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• The table above shows the increment of thermal resistance R
Document Number: 93692
Revision: 06-Jun-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
P
+V
R
R
0.043
0.052
0.066
0.096
0.167
-V
P
V
V
T
G(AV)
I
I
I
GM
T
thCS
GD
thJC
GT
GM
Stg
GT
GD
GM
GM
J
Phase Control Thyristors
(Stud Version), 110 A
T
T
T
T
T
T
T
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 140 °C
= - 40 °C
= 25 °C
= 140 °C
thJC
J
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
TEST CONDITIONS
TEST CONDITIONS
p
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
≤ 5 ms
0.031
0.053
0.071
0.101
0.169
Vishay High Power Products
DRM
anode to
110/111RKI Series
TEST CONDITIONS
T
J
= T
TYP.
J
180
2.5
1.6
80
40
maximum
- 40 to 140
- 40 to 150
1
VALUES
VALUES
TO-209AC (TO-94)
(137)
(120)
0.25
0.27
15.5
130
3.0
3.0
6.0
0.1
12
20
10
14
MAX.
120
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2
-
-
-
-
(lbf ⋅ in)
UNITS
UNITS
UNITS
N · m
K/W
K/W
mA
mA
°C
W
A
V
V
V
g
3